![Hybrid Equivalent of Transistor](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSI0MDAiIGhlaWdodD0iNDAwIiB2aWV3Qm94PSIwIDAgNDAwIDQwMCI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
Figure(a) shows a transistor amplifier circuit. Such circuit can be connected in any one of the three configuration called common emitter,
![Hybrid Equivalent For CC Transistor](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSI0NTAiIGhlaWdodD0iMTUwIiB2aWV3Qm94PSIwIDAgNDUwIDE1MCI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
The figure shows the transistor connected in common emitter configuration and the figure also shows the hybrid equivalent circuit of such a transistor.
![Hybrid Equivalent For CB Transistor](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSI0NTAiIGhlaWdodD0iMTUwIiB2aWV3Qm94PSIwIDAgNDUwIDE1MCI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
The figure shows the transistor connected in common emitter configuration and the figure also shows the hybrid equivalent circuit of such a transistor.
![Hybrid Equivalent for CE Transistor](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSI0NTAiIGhlaWdodD0iMTUwIiB2aWV3Qm94PSIwIDAgNDUwIDE1MCI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
The figure shows the transistor connected in common emitter configuration and the figure also shows the hybrid
![Alloy or Fused Junction](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSIzNTAiIGhlaWdodD0iMTQwIiB2aWV3Qm94PSIwIDAgMzUwIDE0MCI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
This name is a representation for a device having transfer resistors. As we have seen a semiconductor offers less resistance to flow
![UJT Construction](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSIxNjYiIGhlaWdodD0iMjA3IiB2aWV3Qm94PSIwIDAgMTY2IDIwNyI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
The term UJT stands for Uni Junction Transistor. This type of transistor possesses one PN junction and three terminals. Construction, working, applications
![Transistor Timer Circuit Diagram](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSI0MzQiIGhlaWdodD0iMjQ5IiB2aWV3Qm94PSIwIDAgNDM0IDI0OSI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
In electronics timers the output of the timing element is used as a trigger pulse for BJT, FET and UJT, the active devices element signal
![Characteristics Curve of Common Emitter](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSIzNDQiIGhlaWdodD0iMjc3IiB2aWV3Qm94PSIwIDAgMzQ0IDI3NyI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
The bipolar power transistor is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB
![PUT - Programmable Unijunction Transistor Biasing](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSIxMzciIGhlaWdodD0iMjAxIiB2aWV3Qm94PSIwIDAgMTM3IDIwMSI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
The PUT stand for Programmable Unijunction Transistor, it is actually a type of Thyristors and not like the UJT at all.
![Phototransistor Biasing](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSIxMDAiIGhlaWdodD0iMjAwIiB2aWV3Qm94PSIwIDAgMTAwIDIwMCI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
The phototransistor has a light sensitive collector base PN junction. It is exposed to incident light through a lens opening in the transistor package.
![IGBT Construction Symbol](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSI2NzAiIGhlaWdodD0iODcwIiB2aWV3Qm94PSIwIDAgNjcwIDg3MCI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
The insulated gate bipolar transistor (IGBT) is a device which combines the fast acting features and high power capability
![DE-MOSFET](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSIxMjEiIGhlaWdodD0iMTY1IiB2aWV3Qm94PSIwIDAgMTIxIDE2NSI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
FET stands for "Field Effect Transistor" it is a three terminal uni polar solid state device in which current is controlled by an electric field.
![Electrical Circuit Of MOSFET](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSIzNjEiIGhlaWdodD0iMjQxIiB2aWV3Qm94PSIwIDAgMzYxIDI0MSI+PHJlY3Qgd2lkdGg9IjEwMCUiIGhlaWdodD0iMTAwJSIgc3R5bGU9ImZpbGw6I2NmZDRkYjtmaWxsLW9wYWNpdHk6IDAuMTsiLz48L3N2Zz4=)
The power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a device derived from the field effect transistor (FET) for use as a fast acting switch at power levels.
There are three main series of transistor codes used in the UK:Codes beginning with B (or A), Codes beginning with TIP, Codes beginning with 2N
![Crocodile Clip](data:image/svg+xml;base64,PHN2ZyB4bWxucz0iaHR0cDovL3d3dy53My5vcmcvMjAwMC9zdmciIHdpZHRoPSIxMzUiIGhlaWdodD0iNjIiIHZpZXdCb3g9IjAgMCAxMzUgNjIiPjxyZWN0IHdpZHRoPSIxMDAlIiBoZWlnaHQ9IjEwMCUiIHN0eWxlPSJmaWxsOiNjZmQ0ZGI7ZmlsbC1vcGFjaXR5OiAwLjE7Ii8+PC9zdmc+)
Transistor is an three layer PNP or NPN semiconductor device with two junctions. Transistor is made from semiconductor materials